Description
BSZ100N06LS3GATMA1 Infineon Technologies MOSFET N-Channel 60 V 11A (Ta), 20A (Tc) 2.1W (Ta), 50W (Tc) Surface Mount PG-TSDSON-8 T/R RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TSDSON-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 20 A
Rds On – Drain-Source Resistance: 10 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1.2 V
Qg – Gate Charge: 34 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 50 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Reel
Packaging: Cut Tape
Brand: Infineon Technologies
Configuration: Single
Fall Time: 8 ns
Forward Transconductance – Min: 20 S
Height: 1.1 mm
Length: 3.3 mm
Product Type: MOSFET
Rise Time: 58 ns
Series: OptiMOS 3
Reel:5000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 8 ns
Width: 3.3 mm
Part # Aliases: BSZ100N06LS3 G SP000453672
Unit Weight: 0.003966 oz
Manufacturer:Infineon Technologies
Datasheet:Infineon/BSZ100N06LS3 G.pdf
