Description
CAB400M12XM3 Cree/Wolfspeed Mosfet Array 2 N-Channel (Dual) 1200V; 400 A Silicon Carbide Switching-Loss Optimized XM3 Half-Bridge Module Chassis Mount RoHS
Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing loop inductance and enabling simple power bussing. The XM3s SiC optimized packaging enables 175C continuous junction operation, with a high reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions. The XM3 is a perfect fit for demanding applications such as EV chargers, UPS, and traction drives.
Specifications
Manufacturer: Cree, Inc.
Product Category: Discrete Semiconductor Modules
Product: Power MOSFET Modules
Type: Half Bridge Module
Vf – Forward Voltage: 6 V
Vgs – Gate-Source Voltage: – 4 V
Mounting Style: Screw Mount
Package / Case: 80 mm x 53 mm
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 125 C
Packaging: Bulk
Configuration: Dual
Technology: SiC
Brand: Wolfspeed / Cree
Transistor Polarity: N-Channel
Id – Continuous Drain Current: 395 A
Pd – Power Dissipation: 50 mW
Product Type: Discrete Semiconductor Modules
Rds On – Drain-Source Resistance: 5.3 mOhms
Factory Pack Quantity: 1
Subcategory: Discrete Semiconductor Modules
Vds – Drain-Source Breakdown Voltage: 1200 V
Vgs th – Gate-Source Threshold Voltage: 1.8 V
Unit Weight: 7.779355 oz
Manufacturer:Electronic Components
Datasheet:cab400m12xm3.pdf
