Description
Specifications
Product Category: RF JFET Transistors
Manufacturer: Qorvo
RoHS: RoHS Compliant
Transistor Type: MESFET
Technology: GaAs
Gain: 9.5 dB
Vds – Drain-Source Breakdown Voltage: 9 V
Vgs – Gate-Source Breakdown Voltage: – 6 V
Id – Continuous Drain Current: 1 A
Output Power: 26.5 dBm
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 2 W
Mounting Style: SMD/SMT
Package / Case: SOT-223
Packaging: Reel
Brand: Qorvo
NF – Noise Figure: 1.72 dB
Operating Frequency: 1.8 GHz
P1dB – Compression Point: 26.5 dBm
Product: RF JFET
Factory Pack Quantity: 1000
Type: GaAs MESFET
Part # Aliases: 1014602
Unit Weight: 0.006632 oz
Manufacturer Part Number: CLY5
Manufacturer: Electronic Components
