Description
CSD86330Q3D Texas Instruments Dual Mosfet Array 2 N-Channel (Half Bridge) 25V 20A 6W Surface Mount 8-LSONT/R RoHS
Specifications
Manufacturer: Texas Instruments
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: LSON-CLIP-8
Transistor Polarity: N-Channel
Number of Channels: 2 Channel
Vds – Drain-Source Breakdown Voltage: 25 V
Id – Continuous Drain Current: 4.5 A
Rds On – Drain-Source Resistance: –
Vgs – Gate-Source Voltage: – 5 V, + 5 V
Vgs th – Gate-Source Threshold Voltage: 2.1 V, 1.6 V
Qg – Gate Charge: 6.2 nC, 12 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 6 W
Channel Mode: Enhancement
Tradename: NexFET
Packaging: Reel
Packaging: Cut Tape
Brand: Texas Instruments
Configuration: Dual
Development Kit: CSD86330EVM-717, TPS40322EVM-679
Fall Time: 1.9 ns, 4.2 ns
Forward Transconductance – Min: 52 S, 82 S
Height: 1.5 mm
Length: 3.3 mm
Product Type: MOSFET
Rise Time: 7.5 ns, 6.3 ns
Series: CSD86330Q3D
Reel:2500
Subcategory: MOSFETs
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 8.5 ns, 15.8 ns
Typical Turn-On Delay Time: 4.9 ns, 5.3 ns
Width: 3.3 mm
Unit Weight: 0.002254 oz
