Description
DMG1016UDW-7 Diodes Incorporated Mosfet Dual N & P-Channel 20 V 450 mOhm Enhancement Mode
Specifications
Manufacturer: Diodes Incorporated
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-363-6
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Vds – Drain-Source Breakdown Voltage: 20 V, – 20 V
Id – Continuous Drain Current: 1.066 A, – 845 mA
Rds On – Drain-Source Resistance: 450 mOhms, 750 mOhms
Vgs th – Gate-Source Threshold Voltage: 0.5 V
Vgs – Gate-Source Voltage: 4.5 V, – 4.5 V
Qg – Gate Charge: 736.6 nC, 622.4 pC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Dual
Pd – Power Dissipation: 330 mW
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: Reel
Product: MOSFET Small Signal
Series: DMG1016
Transistor Type: 1 N-Channel, 1 P-Channel
Brand: Diodes Incorporated
Fall Time: 12.3 ns, 20.72 ns
Product Type: MOSFET
Rise Time: 7.4 ns, 8.1 ns
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 26.7 ns, 28.4 ns
Typical Turn-On Delay Time: 5.1 ns, 5.1 ns
Unit Weight: 0.000212 oz
Manufacturer Part Number: DMG1016UDW-7
Manufacturer: Diodes Inc.
