Description
DMP3099L-7 Diodes Incorporated Transistor MOSFET P-Ch ENH FET -30V 65mOhm -20V -3.8A 3-Pin SOT-23 T/R RoHS
Specifications
Manufacturer: Diodes Incorporated
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 3.8 A
Rds On – Drain-Source Resistance: 65 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1 V
Qg – Gate Charge: 11 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 1.08 W
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: Reel
Configuration: Single
Series: DMP3099
Transistor Type: 1 P-Channel
Brand: Diodes Incorporated
Fall Time: 15 ns
Product Type: MOSFET
Rise Time: 5 ns
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 31 ns
Typical Turn-On Delay Time: 4.8 ns
Unit Weight: 0.000282 oz
Manufacturer: Diodes Inc.
MFG Part #: DMP3099L-7
