Description
DMT10H015LSS-13 Diodes Power Field-Effect Transistor N-Channel FET 20Vgss 33.3nC 100V 8.3A 1.2W 8-SOIC
Specifications
Manufacturer: Diodes Incorporated
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SO-8
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 8.3 A
Rds On – Drain-Source Resistance: 16 mOhms
Vgs – Gate-Source Voltage: 10 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 33.3 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 1.2 W
Configuration: Single
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: Reel
Height: 1.5 mm
Length: 4.95 mm
Series: DMT10
Transistor Type: 1 N-Channel
Width: 3.95 mm
Brand: Diodes Incorporated
Fall Time: 8.1 ns
Product Type: MOSFET
Rise Time: 7 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 19.7 ns
Typical Turn-On Delay Time: 6.5 ns
Unit Weight: 0.002610 oz
Manufacturer:Diodes Inc.
Datasheet:DMT10H015LSS.pdf
