DXT651-13 Diodes Transistor GP BJT NPN 60V 3A 1000mW SOT-89

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DXT651-13 Diodes Bipolar (BJT) Transistor NPN 60V 3A 200MHz 1W Surface Mount 4-Pin(3+Tab) SOT-89 T/R RoHS

SKU: DXT651-13 Category: Tag: Brand:

Description

DXT651-13 Diodes Incorporated Bipolar Transistors – BJT NPN 60V 3A 1000mW 4-Pin(3+Tab) SOT-89 T/R Lead free / RoHS: Compliant

Specifications
Manufacturer:Diodes Incorporated
Product Category:Bipolar Transistors – BJT
Mounting Style:SMD/SMT
Package / Case:SOT-89-3
Transistor Polarity:NPN
Configuration:Single
Collector- Emitter Voltage VCEO Max:60 V
Collector- Base Voltage VCBO:80 V
Emitter- Base Voltage VEBO:5 V
Maximum DC Collector Current:3 A
Pd – Power Dissipation:1000 mW
Gain Bandwidth Product fT:200 MHz
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 150 C
Series:DXT651
Packaging:Cut Tape
Packaging:Reel
Height:1.5 mm
Length:4.5 mm
Technology:Si
Width:2.5 mm
Brand:Diodes Incorporated
Product Type:BJTs – Bipolar Transistors
Factory Pack Quantity:2500
Subcategory:Transistors
Unit Weight:0.001834 oz
Manufacturer: Diodes Inc.
MFG Part #: DXT651-13

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