Description
EMT1T2R ROHM Semiconductor EMT1 Series 50 V 150 mA SMT Dual PNP General Purpose Transistor
Specifications
Manufacturer: ROHM Semiconductor
Product Category: Bipolar Transistors – BJT
RoHS
Mounting Style: SMD/SMT
Package / Case: EMT-6
Transistor Polarity: PNP
Configuration: Dual
Collector- Emitter Voltage VCEO Max: – 50 V
Collector- Base Voltage VCBO: – 60 V
Emitter- Base Voltage VEBO: – 6 V
Collector-Emitter Saturation Voltage: – 0.5 V
Maximum DC Collector Current: 0.15 A
Gain Bandwidth Product fT: 140 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: EMT1
DC Current Gain hFE Max: 560
Height: 0.5 mm
Length: 1.6 mm
Packaging: Cut Tape
Packaging: Reel
Width: 1.2 mm
Brand: ROHM Semiconductor
Continuous Collector Current: – 150 mA
DC Collector/Base Gain hfe Min: 120
Pd – Power Dissipation: 150 mW
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 8000
Subcategory: Transistors
Part # Aliases: EMT1
Unit Weight: 0.000952 oz
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
Manufacturer:Rohm Semiconductor
Datasheet:Rohm/UMT1NR.pdf
