Description
Fairchild Semiconductor Bss123 IC MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:0.5A; On-Resistance, Rds(on):10ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-323; Drain-Source Breakdown Voltage:100V
BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor
This N-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.The BSS123 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
0.17A, 100V
RDS(ON) = 6 O @ VGS = 10V
RDS(ON) = 10 O @ VGS = 4.5V
High density cell design for extremely low RDS(ON)
Rugged and reliable
Compact industry standard SOT-23 surface mount package
Manufacturer: Fairchild Semiconductor
Product Category: MOSFET
RoHS: RoHS Compliant Details
Id – Continuous Drain Current: 170 mA
Vds – Drain-Source Breakdown Voltage: 100 V
Rds On – Drain-Source Resistance: 6 Ohms
Transistor Polarity: N-Channel
Vgs – Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 360 mW
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Packaging: Reel
Brand: Fairchild Semiconductor
Channel Mode: Enhancement
Configuration: Single
Fall Time: 9 ns
Forward Transconductance – Min: 0.8 S
Minimum Operating Temperature: – 55 C
Rise Time: 9 ns
Series: BSS123
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 17 ns
Typical Turn-On Delay Time: 1.7 ns
VendorNumber: 5121
Part # Aliases: BSS123_NL
Unit Weight: 0.002116 oz
Manufacturer Part Number: BSS123-FSC
Fairchild Semiconductor
