Description
FAIRCHILD SEMICONDUCTOR NDS355AN MOSFET Transistor, N Channel, 1.7 A, 30 V, 0.065 ohm, 10 V, 1.6 V SSOT-3
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
- 1.7 A, 30 V. RDS(ON) = 0.125Ω @ VGS= 4.5 V
RDS(ON) = 0.085 Ω @ VGS= 10 V - Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities
- High density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Compact industry standard SOT-23 surface mount package
Part Specification:
- Type : Power MOSFET
- Number of Elements : Single
- Polarity : N
- Channel Mode : Enhancement
- Drain-Source On-Volt : 30V
- Gate-Source Voltage (Max) : ±20V
- Drain Current (Max) : 1.7A
- Drain-Source On-Res : 0.085Ohm
- Package Type : SuperSOT
- Packaging : Tape and Reel
- Power Dissipation : 0.5W
- Output Power (Max) : Not Required
- Frequency (Max) : Not Required
- Noise Figure : Not Required
- Power Gain : Not Required
- Drain Efficiency : Not Required
- Pin Count : 3
- Mounting : Surface Mount
- Operating Temp Range : -55C to 150C
- Operating Temperature Classification : Military
Manufacturer Part Number: NDS355AN
Manufacturer: Fairchild Semiconductor
