Description
FCP11N60F onsemi Trans MOSFET N-Channel 600V 11A 125W Through Hole TO-220-3 RoHS
Specifications
Manufacturer: onsemi
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 11 A
Rds On – Drain-Source Resistance: 380 mOhms
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage: 3 V
Qg – Gate Charge: 52 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 125 W
Channel Mode: Enhancement
Tradename: SuperFET FRFET
Packaging: Tube
Brand: onsemi / Fairchild
Configuration: Single
Fall Time: 56 ns
Forward Transconductance – Min: 9.7 S
Height: 16.3 mm
Length: 10.67 mm
Product Type: MOSFET
Rise Time: 98 ns
Series: FCP11N60F
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: N-Channel MOSFET
Typical Turn-Off Delay Time: 119 ns
Typical Turn-On Delay Time: 34 ns
Width: 4.7 mm
Unit Weight: 0.068784 oz
Manufacturer: ON Semiconductor
MFG Part #: FCP11N60F
