Description
FDC6561AN ON Semiconductor Dual MOSFET, N Channel, 30 V, 2.5 A, 0.082 ohm, SuperSOT, Surface Mount TSOT-23 T/R, RoHS
Specifications
Manufacturer: ON Semiconductor
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SSOT-6
Transistor Polarity: N-Channel
Number of Channels: 2 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 2.5 A
Rds On – Drain-Source Resistance: 95 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1 V
Qg – Gate Charge: 3.2 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 900 mW
Channel Mode: Enhancement
Tradename: PowerTrench
Packaging: Cut Tape
Packaging: Reel
Configuration: Dual
Height: 1.1 mm
Length: 2.9 mm
Product: MOSFET Small Signal
Series: FDC6561AN
Transistor Type: 2 N-Channel
Type: MOSFET
Width: 1.6 mm
Brand: ON Semiconductor / Fairchild
Forward Transconductance – Min: 5 S
Fall Time: 10 ns
Product Type: MOSFET
Rise Time: 10 ns
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 12 ns
Typical Turn-On Delay Time: 6 ns
Part # Aliases: FDC6561AN_NL
Unit Weight: 0.001270 oz
Manufacturer: ON Semiconductor
MFG Part #: FDC6561AN
