Description
FDP085N10A-F102 ON Semiconductor / Fairchild Power MOSFET, N Channel, 100 V, 96 A, 0.00735 ohm, TO-220, Through Hole RoHS
Specifications
Manufacturer: ON Semiconductor
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 96 A
Rds On – Drain-Source Resistance: 7.35 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 4 V
Qg – Gate Charge: 31 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 188 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Height: 16.3 mm
Length: 10.67 mm
Series: FDP085N10A
Transistor Type: 1 N-Channel
Width: 4.7 mm
Brand: ON Semiconductor / Fairchild
Forward Transconductance – Min: 72 S
Fall Time: 8 ns
Product Type: MOSFET
Ris
Manufacturer:ON Semiconductor
Datasheet:on-semi/FDP085N10A-D.pdf
