Description
Fairchild FDV301N Transistor MOSFET N-Channel 25 V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 RoHS
Specifications
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 25 V
Id – Continuous Drain Current: 220 mA
Rds On – Drain-Source Resistance: 5 Ohms
Vgs – Gate-Source Voltage: – 8 V, + 8 V
Vgs th – Gate-Source Threshold Voltage: 700 mV
Qg – Gate Charge: 0.7 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 350 mW
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: Reel
Configuration: Single
Height: 1.2 mm
Length: 2.9 mm
Product: MOSFET Small Signal
Series: FDV301N
Transistor Type: 1 N-Channel
Type: FET
Width: 1.3 mm
Brand: Fairchild
Forward Transconductance – Min: 0.2 S
Fall Time: 6 ns
Product Type: MOSFET
Rise Time: 6 ns
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 3.5 ns
Typical Turn-On Delay Time: 3.2 ns
Part # Aliases: FDV301N_NL
Unit Weight: 0.000282 oz
The FDV301N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance, this one N channel FET can replace several different digital transistors with different bias resistor values. FDV301N is suitable for low voltage and power management applications.
Manufacturer:Fairchild Semiconductor
Datasheet:Fairchild/FDV301N.pdf
