Description
FF200R12KS4 Infineon Transistor IGBT Modules 1200V 200A 7-pin 62MM-1
Specifications
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: N
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 3.2 V
Continuous Collector Current at 25 C: 275 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 1.4 kW
Package / Case: 62 mm
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 125 C
Packaging: Tray
Height: 30.5 mm
Length: 106.4 mm
Series: IGBT2 Fast
Technology: Si
Width: 61.4 mm
Brand: Infineon Technologies
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V
Product Type: IGBT Modules
Factory Pack Quantity: 10
Subcategory: IGBTs
Part # Aliases: SP000100707 FF200R12KS4HOSA1
Unit Weight: 12 oz
Manufacturer: Infineon Technologies
MFG Part #: FF200R12KS4
