Description
FQP12N60C onsemi / Fairchild MOSFET N-Channel 600 V 12A 225W Through Hole TO-220-3 RoHS
Specifications
Manufacturer: onsemi
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 12 A
Rds On – Drain-Source Resistance: 650 mOhms
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage: 4 V
Qg – Gate Charge: 48 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 225 W
Channel Mode: Enhancement
Packaging: Tube
Brand: onsemi / Fairchild
Configuration: Single
Fall Time: 90 ns
Forward Transconductance – Min: 13 S
Height: 16.3 mm
Length: 10.67 mm
Product Type: MOSFET
Rise Time: 85 ns
Series: FQP12N60C
Reel:1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 155 ns
Typical Turn-On Delay Time: 30 ns
Width: 4.7 mm
Unit Weight: 0.068784 oz
