Description
FQP13N10L Fairchild Power MOSFET N-Ch QFET N-Channel 100 V 12.8A (Tc) 65W (Tc) Through Hole TO-220-3 RoHS
Specifications
Manufacturer: ON Semiconductor
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 12.8 A
Rds On – Drain-Source Resistance: 180 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1 V
Qg – Gate Charge: 12 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 65 W
Channel Mode: Enhancement
Tradename: QFET
Packaging: Tube
Configuration: Single
Height: 16.3 mm
Length: 10.67 mm
Series: FQP13N10L
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 4.7 mm
Brand: ON Semiconductor / Fairchild
Forward Transconductance – Min: 9.5 S
Fall Time: 72 ns
Product Type: MOSFET
Rise Time: 220 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 22 ns
Typical Turn-On Delay Time: 7.5 ns
Part # Aliases: FQP13N10L_NL
Unit Weight: 0.068784 oz
Manufacturer: Fairchild Semiconductor
MFG Part #: FQP13N10L
