Description
FQP4P40 ON Semiconductor / Fairchild MOSFET 400V 3.5A 85W P-Channel QFET TO-220-3 RoHS
Specifications
Manufacturer: ON Semiconductor
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 400 V
Id – Continuous Drain Current: 3.5 A
Rds On – Drain-Source Resistance: 3.1 Ohms
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage: 5 V
Qg – Gate Charge: 23 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 85 W
Channel Mode: Enhancement
Tradename: QFET
Packaging: Tube
Configuration: Single
Height: 16.3 mm
Length: 10.67 mm
Series: FQP4P40
Transistor Type: 1 P-Channel
Type: MOSFET
Width: 4.7 mm
Brand: ON Semiconductor / Fairchild
Forward Transconductance – Min: 2.7 S
Fall Time: 37 ns
Product Type: MOSFET
Rise Time: 55 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 35 ns
Typical Turn-On Delay Time: 13 ns
Part # Aliases: FQP4P40_NL
Unit Weight: 0.068784 oz
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge.
Manufacturer: Fairchild Semiconductor
MFG Part #: FQP4P40
