Description
ON Semiconductor / Fairchild FQPF7N65C ^Power Field-Effect Transistor MOSFET 650V N-Channel Adv Q-FET C-Series 650V 7A TO220F RoHS
Specifications
Manufacturer: ON Semiconductor
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 650 V
Id – Continuous Drain Current: 7 A
Rds On – Drain-Source Resistance: 1.4 Ohms
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 36 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 52 W
Channel Mode: Enhancement
Tradename: QFET
Packaging: Tube
Configuration: Single
Height: 16.07 mm
Length: 10.36 mm
Series: FQPF7N65C
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 4.9 mm
Brand: ON Semiconductor / Fairchild
Forward Transconductance – Min: 8 S
Fall Time: 55 ns
Product Type: MOSFET
Rise Time: 50 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 90 ns
Typical Turn-On Delay Time: 20 ns
Part # Aliases: FQPF7N65C_NL
Unit Weight: 0.068784 oz
Manufacturer: ON Semiconductor
MFG Part #: FQPF7N65C
