Description
HARRIS IRF830 N-Channel MOSFET Transistor 500V 4.5A TO-220
Family IRF830
Channel Mode Enhancement
Channel Type N
Maximum Continuous Drain Current 4.5A
Maximum Drain Source Resistance 1.5Ohm@10V
Maximum Drain Source Voltage 500V
Category Power MOSFET
Maximum Gate Source Voltage ±20V
Typical Fall Time 5ns
Typical Gate Charge @ Vgs 22nC@10V
Typical Input Capacitance @ Vds 610pF@25V
Typical Rise Time 8ns
Typical Turn-On Delay Time 11.5ns
Manufacturer Part Number: IRF830-H
Manufacturer: Electronic Components
