Description
HY19P03B Huayi Microelectronics MOSFET P-Channel Enhancement Mode 30V 90A TO-263-2L RoHS
Type Designator: HY19P03B
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 96 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 90 A
Maximum Junction Temperature (Tj): 150 C
Total Gate Charge (Qg): 90 nC
Rise Time (tr): 16 nS
Drain-Source Capacitance (Cd): 461 pF
Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm
Package: TO263
Manufacturer:Electronic Components
Datasheet:HY19P03.pdf
