Description
IDT7164L25YGI IDT Integrated Device Technology SRAM – Asynchronous Memory IC 64Kb (8K x 8) Parallel 25ns 28-SOJ
Product Attributes
Categories Integrated Circuits (ICs)
Memory
Manufacturer Renesas Electronics America Inc.
Packaging Tube
Memory Type Volatile
Memory Format SRAM
Technology SRAM – Asynchronous
Memory Size 64Kb (8K x 8)
Memory Interface Parallel
Write Cycle Time – Word, Page 25ns
Access Time 25ns
Voltage – Supply 4.5V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 28-BSOJ (0.300″, 7.62mm Width)
Supplier Device Package 28-SOJ
Base Part Number IDT7164
The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K x 8. It is fabricated using high-performance, high-reliability CMOS technology. Address access times as fast as 20ns are available and the circuit offers a reduced power standby mode. When CS1 goes HIGH or CS2 goes LOW, the circuit will automatically go to, and remain in, a low-power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. The IDT7164 is packaged in a 28-pin 300 mil CERDIP, a 28-pin 600 mil CERDIP, 300mil Plastic DIP and 300mil SOJ Military grade product is manufactured in compliance with MIL-STD- 883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.
Manufacturer:Renesas
Datasheet:Renesas/IDT_7164SL_DST_20161205.pdf
