Description
IDT7164L55TDB IDT Integrated Device Technology Memory High-speed address/chip select access time Military: 20/25/35/45/55/70/85/100ns (max.) Industrial: 25/35ns (max.) Commercial: 15/20/25/35ns (max.) Low power consumption Battery backup operation 2V data retention voltage (L Version only) Produced with advanced CMOS high-performance technology Inputs and outputs directly TTL-compatible Three-state outputs Available in 28-pin DIP, CERDIP and SOJ Military product compliant to MIL-STD-883, Class B
Specifications
Manufacturer: IDT (Integrated Device Technology)
Product Category: SRAM
RoHS: N
Memory Size: 64 kbit
Organization: 8 k x 8
Access Time: 55 ns
Interface Type: Parallel
Supply Voltage – Max: 5.5 V
Supply Voltage – Min: 4.5 V
Supply Current – Max: 90 mA
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 125 C
Mounting Style: Through Hole
Package / Case: CDIP-28
Packaging: Tube
Height: 3.56 mm
Length: 37.72 mm
Memory Type: SDR
Series: 7164L55
Type: Asynchronous
Width: 7.62 mm
Brand: IDT
CNHTS: 8542319000
HTS Code: 8542320041
MXHTS: 85423201
Product Type: SRAM
Factory Pack Quantity: 13
Subcategory: Memory & Data Storage
Part # Aliases: 7164 IDT7164L55TDB
Manufacturer:Renesas
Datasheet:Renesas/IDT_7164SL_DST_20161205.pdf
