Description
IPD320N20N3 G Infineon Technologies Trans MOSFET N-Ch 200V 34A DPAK-2 OptiMOS 3 TO-252-3 RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 200 V
Id – Continuous Drain Current: 34 A
Rds On – Drain-Source Resistance: 27 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 29 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 136 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Cut Tape
Packaging: Reel
Configuration: Single
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 N-Channel
Type: OptiMOS 3 Power Transistor
Width: 6.22 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 28 S
Fall Time: 4 ns
Product Type: MOSFET
Rise Time: 9 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 21 ns
Typical Turn-On Delay Time: 11 ns
Part # Aliases: SP000677838 IPD320N20N3GBTMA1
Unit Weight: 0.139332 oz
Manufacturer:Electronic Components
Datasheet:IPD320N20N3 G.pdf
