Description
IPP60R190C6XKSA1 Infineon Technologies MOSFET CoolMOS C6 N-Channel 600 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO220-3 RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 20.2 A
Rds On – Drain-Source Resistance: 170 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2.5 V
Qg – Gate Charge: 63 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 151 W
Channel Mode: Enhancement
Tradename: CoolMOS
Packaging: Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 9 ns
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 11 ns
Series: CoolMOS C6
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 110 ns
Typical Turn-On Delay Time: 15 ns
Width: 4.4 mm
Part # Aliases: IPP60R190C6 SP000621158
Unit Weight: 0.068784 oz
Manufacturer: Electronic Components
MFG Part #: IPP60R190C6XKSA1
