Description
IPW60R041P6 Infineon Transistor MOSFET Power Field-Effect Transistor, 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 77.5 A
Rds On – Drain-Source Resistance: 37 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 3.5 V
Qg – Gate Charge: 170 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 481 W
Channel Mode: Enhancement
Tradename: CoolMOS
Packaging: Tube
Configuration: Single
Height: 21.1 mm
Length: 16.13 mm
Series: CoolMOS P6
Transistor Type: 1 N-Channel
Width: 5.21 mm
Brand: Infineon Technologies
Fall Time: 5 ns
Product Type: MOSFET
Rise Time: 27 ns
Factory Pack Quantity: 30
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 90 ns
Typical Turn-On Delay Time: 29 ns
Part # Aliases: SP001091630 IPW60R041P6FKSA1
Unit Weight: 0.211644 oz
Manufacturer: Infineon Technologies
MFG Part #: IPW60R041P6
