Description
IPW60R190C6 Infineon Technologies ^Transistor MOSFET N-CH 650V 20.2A 3-Pin TO-247 Tube RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 20.2 A
Rds On – Drain-Source Resistance: 190 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 3.5 V
Qg – Gate Charge: 63 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 151 W
Channel Mode: Enhancement
Tradename: CoolMOS
Packaging: Tube
Brand: Infineon Technologies
Configuration: Single
Height: 21.1 mm
Length: 16.13 mm
Product Type: MOSFET
Series: CoolMOS C6
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 5.21 mm
Part # Aliases: SP000621160 IPW6R19C6XK IPW60R190C6FKSA1
Unit Weight: 0.211644 oz
NRND: Not recommended for new designs.
Manufacturer: Infineon Technologies
MFG Part #: IPW60R190C6
