Description
IRF5210STRLPBF Infineon / IR P-channel Power MOSFET 100 V 38A (Tc) 3.1W (Ta), 170W (Tc) Surface Mount D2PAK T/R RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-263-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 40 A
Rds On – Drain-Source Resistance: 60 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 120 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 3.8 W
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Brand: Infineon / IR
Configuration: Single
Height: 2.3 mm
Length: 6.5 mm
Product Type: MOSFET
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Width: 6.22 mm
Part # Aliases: IRF5210STRLPBF SP001554020
Unit Weight: 0.139332 oz
Manufacturer: Electronic Components
MFG Part #: IRF5210STRLPBF
