Description
Vishay IRF840PBF Vishay MOSFET N-Channel 500V 8A 125W Through Hole
Specifications
Manufacturer: Vishay
Product Category: MOSFET
RoHs
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220AB-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 500 V
Id – Continuous Drain Current: 8 A
Rds On – Drain-Source Resistance: 850 mOhms
Vgs – Gate-Source Voltage: 10 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 63 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 125 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Series: IRF
Transistor Type: 1 N-Channel
Brand: Vishay Semiconductors
Forward Transconductance – Min: 4.9 S
Fall Time: 20 ns
Product Type: MOSFET
Rise Time: 23 ns
Factory Pack Quantity: 50
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 49 ns
Typical Turn-On Delay Time: 14 ns
Part # Aliases: SIHF840-E3
Unit Weight: 0.211644 oz
Manufacturer: Vishay
MFG Part #: IRF840PBF
