IRFB4020PBF IR MOSFET N-Channel 200V 18A 100W TO-220AB

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IRFB4020PBF Infineon / IR MOSFET N-Channel 200V 18A 100W Through Hole TO-220AB RoHS

SKU: IRFB4020PBF Category: Tag: Brand:

Description

IRFB4020PBF Infineon / IR International Rectifier Digital Audio Mosfet N-Channel 200V 18A 100W Through Hole TO-220AB RoHS

Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 200 V
Id – Continuous Drain Current: 18 A
Rds On – Drain-Source Resistance: 100 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1.8 V
Qg – Gate Charge: 18 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 100 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon / IR
Forward Transconductance – Min: 24 S
Fall Time: 6.3 ns
Product Type: MOSFET
Rise Time: 12 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 16 ns
Typical Turn-On Delay Time: 7.8 ns
Unit Weight: 0.068784 oz
Manufacturer: Infineon Technologies
MFG Part #: IRFB4020PBF

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