Description
IRFR1205TRL Infineon Technologies Transistor MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 55 V
Id – Continuous Drain Current: 37 A
Rds On – Drain-Source Resistance: 27 mOhms
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 43.3 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 69 W
Configuration: Single
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: Reel
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 N-Channel
Type: HEXFET Power MOSFET
Width: 6.22 mm
Brand: Infineon Technologies
Fall Time: 60 ns
Product Type: MOSFET
Rise Time: 69 ns
Factory Pack Quantity: 2000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 47 ns
Typical Turn-On Delay Time: 7.3 ns
Part # Aliases: SP001560566
Unit Weight: 0.139332 oz
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Manufacturer:Infineon Technologies
Datasheet:IR/IRFR-U1205.pdf
