Description
IRFR120ZTRPBF Infineon Technologies N-Channel 100V 8.7A 35W Surface Mount D-Pak T/R RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 8.7 A
Rds On – Drain-Source Resistance: 150 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 4 V
Qg – Gate Charge: 6.9 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 35 W
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Brand: Infineon / IR
Configuration: Single
Fall Time: 23 ns
Forward Transconductance – Min: 16 S
Height: 2.3 mm
Length: 6.5 mm
Product Type: MOSFET
Rise Time: 26 ns
Reel:2000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: Automotive MOSFET
Typical Turn-Off Delay Time: 27 ns
Typical Turn-On Delay Time: 8.3 ns
Width: 6.22 mm
Part # Aliases: IRFR120ZTRPBF SP001554998
Unit Weight: 0.011640 oz
Manufacturer: Infineon Technologies
MFG Part #: IRFR120ZTRPBF
