Description
50V SINGLE N-CHANNEL HEX FET POWER MOSFET IN A TO -220AB PKG MFG: IRC IR- IRFZ30 MOSFET Transistor Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No MOSFET Transistor Drain-Source Breakdown Voltage:50V; Continuous Drain Current, Id:30A; Package/Case:TO-220AB; Leaded Process Compatible:Yes; Continuous Drain Current – 25 Deg C:30A; Peak Reflow
Specifications
Product Category: MOSFET
RoHS: No
Mounting Style: Through Hole
Package / Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 50 V
Id – Continuous Drain Current: 53 A
Rds On – Drain-Source Resistance: 45 mOhms
Vgs – Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 150 C
Technology: Si
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single
Fall Time: 16 ns
Minimum Operating Temperature: – 55 C
Pd – Power Dissipation: 75 W
Rise Time: 16 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 23 ns
Typical Turn-On Delay Time: 12 ns
Unit Weight: 0.211644 oz
Manufacturer Part Number: IRFZ30.
Manufacturer: Electronic Components
