Description
ITT Semiconductor IMBT3904 NPN General Purpose Transistor / 50mA 40V SOT-23
Technical data
Polarity NPN
Collector-Emitter Voltage (Vce) 40V
Collector Current (Ic) 50mA
Power Dissipation (Pd) 310mW
Amplification (hFE) 100 – 300
Transition Frequency (fT) 300MHz
Casing SOT-23
Temperature -55/+150°C
Mounting SMD
Type Designator: IMBT3904
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.31
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 40
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 0.1
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 300
Collector capacitance (Cc), pF: 4
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: –
Package of IMBT3904 transistor: TO236
Manufacturer:Electronic Components
Datasheet:surface_mount_transistors.pdf
