Description
IXTA36N30P IXYS Power MOSFET, N Channel, 300 V, 36 A, 0.092 ohm, Surface Mount TO-263 (D2PAK)RoHS
Specifications
Manufacturer: IXYS
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-263-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 300 V
Id – Continuous Drain Current: 36 A
Rds On – Drain-Source Resistance: 110 mOhms
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage: 3 V
Qg – Gate Charge: 70 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 300 W
Channel Mode: Enhancement
Packaging: Tube
Brand: IXYS
Configuration: Single
Fall Time: 28 ns
Height: 4.5 mm
Length: 9.9 mm
Product Type: MOSFET
Rise Time: 30 ns
Series: IXTA36N30
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 97 ns
Typical Turn-On Delay Time: 24 ns
Width: 9.2 mm
Unit Weight: 0.056438 oz
