Description
J2SD882P JILIN PNP EPITAXIAL SILICON TRANSISTOR,3A,30V ,500MW SOT-89
FEATURES
Epitaxial silicon
High switching speed
RoHS product
APPLICATIONS
High frequency switching power
supply
High frequency power transform
Commonly power amplifier circuit
Parameter Symbol Limits Unit
Collector-base voltage V CBO 40 V
Collector-emitter voltage V CEO 30 V
Emitter-base voltage V EBO 6 V
Peak Pulse Current I CM 3 A
Collector power
dissipation PC 0.5 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to 150 °C
Datasheet:J2SD882.pdf
