Description
JANTX2N3421S Microsemi Bipolar (BJT) Transistor NPN 80V 3A 1W Through Hole TO-39 (TO-205AD)
This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-5 and low profile U4 packages. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.
If you require a general purpose BJT that can handle high voltages, then the NPN JANTX2N3421S BJT, developed by Microsemi, is for you. This bipolar junction transistor’s maximum emitter base voltage is 8 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 8 V.
Product Attributes
Categories: Discrete Semiconductor Products
Transistors – Bipolar (BJT) – Single
Manufacturer: Microsemi Corporation
Series: Military, MIL-PRF-19500/393
Packaging: Bulk
Transistor Type: NPN
Current – Collector (Ic) (Max): 3A
Voltage – Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) at Ib, Ic: 500mV at 200mA, 2A
Current – Collector Cutoff (Max): 5uA
DC Current Gain (hFE) (Min) at Ic, Vce: 40 at 1A, 2V
Power – Max: 1W
Operating Temperature: -65C to 200C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Manufacturer:Microsemi
Datasheet:Microsemi/lds-0192-1.pdf
