Description
JILIN SINO-MICROELECTRONICS 3DD5024 HIGH BREAKDOWN VOLTAGE Silicon NPN transistor 1500V 8A 50W in a TO-220F Plastic Package RoHS
This is high breakdown voltage of NPN bipolar transistor. A case-rated bipolar transistor refers to a transistor that has a specified maximum power dissipation and operating temperature range associated with its package or case. It indicates the conditions under which the transistor can safely operate without exceeding its rated limits and potentially damaging the device. 3DD5 3 24(P) is high breakdown voltage of NPN bipolar transistor.The main process of manufacture:high voltage planar process,triple diffused process etc.,adoption of fully plastic packge. RoHS product.
Part Number: D5024, 3DDD5024
Function: 600V, 8A, High breakdown voltage of NPN bipolar Transistor
Package: TO-220HF
Manufacturer: Jilin Sino Microelectronics
1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 600 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 8 A
5. Total Dissipation : Pc = 35 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Datasheet:20121219102702.PDF
