Description
K4F8E304HB-MGCJ Samsung Semiconductor Volatile DRAM Parallel Memory 8Gbit 256M x 32, 1.1V Surface Mount 200-TFBGA. The K4F8E304HB-MGCJ is a high-speed, low-power, 512M x 8-bit double data rate synchronous DRAM (SDRAM) designed for use in various memory-intensive applications. This memory module offers fast data transfer rates and efficient operation, making it ideal for systems requiring high-performance memory solutions.
Memory Format: DRAM
Memory Size: 8Gbit
Memory Organization: 256M x 32
Memory Interface: Parallel
Voltage – Supply: 1.1V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Device Package: 200-TFBGA
Package: Tray
Manufacturer Part #: K4F8E304HB-MGCJ
Manufacturer: Samsung Semiconductor
