Description
K4S510432D-UC75T00 Samsung Semiconductor Volatile DRAM LVTTL Memory 512Mbit 128M x 4 SDRAM 3V ~ 3.6V Surface Mount 54-TSOP II. The K4S510432D / K4S510832D / K4S511632D is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mbit
Memory Organization: 128M x 4
Memory Interface: LVTTL
Voltage – Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Device Package: 54-TSOP II
Package: Tape & Reel (TR)
Manufacturer Part #: K4S510432D-UC75T00
Manufacturer: Samsung Semiconductor
Datasheet: Samsung SDRAM Product Guide
