Description
The K4S560432H is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Part #: K4S561632H-UC75
Part Category: Memory ICs
Manufacturer: Samsung Semiconductor Division
Description: IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
REACH Compliant Yes
EU RoHS Compliant Yes
Status Discontinued
Sub Category DRAMs
Access Time-Max 5.4 ns
Clock Frequency-Max (fCLK) 133.0 MHz
Interleaved Burst Length 1,2,4,8
I/O Type COMMON
JESD-30 Code R-PDSO-G54
JESD-609 Code e6
Manufacturer:Samsung
Datasheet:SAMSS07002-1.pdf
