Description
K6F3216U6M-EF70T Samsung Semiconductor Volatile SRAM Parallel Memory 32Mbit 2M x 16 70ns SRAM – Asynchronous 2.7V ~ 3.6V Surface Mount 55-TFBGA (7.5×12), Super Low Power and Low Voltage Full CMOS Static RAM. The K6F1616U6A families are fabricated by SAMSUNG ′ s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
Memory Format: SRAM
Technology: SRAM – Asynchronous
Memory Size: 32Mbit
Memory Organization: 2M x 16
Memory Interface: Parallel
Voltage – Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Device Package: 55-TFBGA (7.5×12)
Package: Tape & Reel (TR)
Manufacturer Part #: K6F3216U6M-EF70T
Manufacturer: Samsung Semiconductor
Datasheet: K6F1616U6A
