Description
K6X0808C1D-BF70 Samsung Semiconductor Volatile SRAM Parallel Memory 256Kbit 32K x 8 70ns SRAM – Asynchronous 4.5V ~ 5.5V Surface Mount 28-SOP. The K6X0808C1D families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support verious operating temperature ranges and have various pack- age types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
Memory Format: SRAM
Technology: SRAM – Asynchronous
Memory Size: 256Kbit
Memory Organization: 32K x 8
Memory Interface: Parallel
Voltage – Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Device Package: 28-SOP
Package: Tube
Manufacturer Part #: K6X0808C1D-BF70
Manufacturer: Samsung Semiconductor
Datasheet: K6X0808C10
