Description
K6X4008C1F-MF55000 Samsung Semiconductor Volatile SRAM Parallel Memory 4Mbit 512K x 8 55ns SRAM – Asynchronous 4.5V ~ 5.5V Surface Mount 32-TSOP REVERSE. The K6X4008C1F families are fabricated by SAMSUNG ′ s advanced full CMOS process technology. The families sup- ports various operating temperature range and various package types for user flexibility of system design. The fam- ilies also support low data retention voltage for battery back- up operation with low data retention current.
Memory Format: SRAM
Technology: SRAM – Asynchronous
Memory Size: 4Mbit
Memory Organization: 512K x 8
Memory Interface: Parallel
Voltage – Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Device Package: 32-TSOP REVERSE
Package: Tray
Manufacturer Part #: K6X4008C1F-MF55000
Manufacturer: Samsung Semiconductor
Datasheet: K6X4008C1F
