LMBT5551DW1T1G LRC Transistor NPN 6V 0.6A SC88

Description

LMBT5551DW1T1G LRC Small Signal Transistor NPN 6V 0.6A dual surface mount SC88 RoHS
Type Designator: LMBT5551DW1T1G

SMD Transistor Code: G1

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150C

Forward Current Transfer Ratio (hFE), MIN: 80