Description
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network 5 consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the LMUN5311DW1T1G series, two complementary BRT devices are housed in the SOT363 package which is ideal for low power surface mount applications where board space is at a premium.
Technical Attributes
Minimum DC Current Gain 80@5mA@10V V
Configuration Dual
Maximum Collector Emitter Voltage 50 V
Typical Input Resistor 47 kOhm
Type NPN|PNP
Mounting Surface Mount
Operating Temperature -55 to 150 C
Peak DC Collector Current 100 mA
Package Dimensions 2.2 x 1.35 x 1 mm
Manufacturer:Electronic Components
Datasheet:LMUN5313DW1T1G.pdf
