Description
M5M5V108DFP-70H Samsung Semiconductor Volatile SRAM Parallel Memory 1Mbit 128K x 8 70ns SRAM – Asynchronous 3V Surface Mount 32-SOP. The M5M5V108DFP are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM.
They are low standby current and low operation current and ideal for the battery back-up application.
The M5M5V108DVP,KV are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD).
FEATURES
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by S1,S2
● Data hold on +2V power supply
● Three-state outputs : OR – tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
M5M5V108DFP ············ 32pin 525mil SOP
M5M5V108DVP,RV ············ 32pin 8 X 20 mm2 TSOP
M5M5V108DKV,KR ············ 32pin 8 X 13.4 mm2 TSOP
APPLICATION
Small capacity memory units
Memory Format: SRAM
Technology: SRAM – Asynchronous
Memory Size: 1Mbit
Memory Organization: 128K x 8
Memory Interface: Parallel
Voltage – Supply: 3V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Device Package: 32-SOP
Package: Tube
Manufacturer Part #: M5M5V108DFP-70H
Datasheet: M5M5V108DFP-70H
