MBRS360T3G ON-SEMI RECTIFIER SCHOTTKY BARRIER 3A IF; 0.740V; 60V SMC

MBRS360T3G ON Semiconductor MBRS360T3G ON Semiconductor Schottky Diodes & Rectifiers 3A 60V

Description

MBRS360T3G ON Semiconductor | RECTIFIER, SCHOTTKY BARRIER; SMC; 3A IF; 0.740V; 60V; 125A IFRM; 164C/W; 11C/W RoHS

MBRS360T3 Series 60 V 125 A Surface Mount Schottky Power Rectifier – CASE 403

The MBRS360T3 devices employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

Key Features:

  • Small Compact Surface Mountable Package with J−Bend Leads
  • Rectangular Package for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • Excellent Ability to Withstand Reverse Avalanche Energy Transients
  • Guard−Ring for Stress Protection
  • Pb−Free Package is Available

Characteristics:

  • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
  • Weight:
    • 217 mg (Approximately), SMC
    • 95 mg (Approximately), SMB
  • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
  • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
  • Polarity: Notch in Plastic Body Indicates Cathode Lead
  • Device Meets MSL 1 Requirements
  • ESD Ratings:
    • Machine Model, C
    • Human Body Model, 3B

Manufacturer Part Number: MBRS360T3G
Manufacturer: ON Semiconductor

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