Description
MJE253G onsemi Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.5 W Through Hole TO-126 RoHS
Specifications
Manufacturer: onsemi
Product Category: Bipolar Transistors – BJT
Mounting Style: Through Hole
Package / Case: TO-225-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: – 100 V
Collector- Base Voltage VCBO: – 100 V
Emitter- Base Voltage VEBO: – 7 V
Collector-Emitter Saturation Voltage: – 600 mV
Maximum DC Collector Current: – 4 A
Pd – Power Dissipation: 15 W
Gain Bandwidth Product fT: 40 MHz
Minimum Operating Temperature: – 65 C
Maximum Operating Temperature: + 150 C
Series: MJE253
Packaging: Bulk
Brand: onsemi
Continuous Collector Current: 4 A
DC Collector/Base Gain hfe Min: 40
Height: 11.04 mm
Length: 7.74 mm
Product Type: BJTs – Bipolar Transistors
Subcategory: Transistors
Technology: Si
Width: 2.66 mm
Unit Weight: 0.024692 oz
Manufacturer: Electronic Components
MFG Part #: MJE253G
